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Asked: 2023-07-23T09:39:24-04:00 In:

12.1 A class A emitter follower, biased using the circuit shown in Fig. 12.3, uses VCC = 10 V, R = RL = 1 kΩ, with all transistors (including Q3) identical. Assume VBE = 0.7 V, VCEsat = 0.3 V, and β to be very large. For linear operation, what are the upper and lower limits of output voltage, and the corresponding inputs? How do these values change if the emitter–base junction area of Q3 is made twice as big as that of Q2? Half as big?

Venkyelectrical
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12.1 A class A emitter follower, biased using the circuit shown in Fig. 12.3, uses VCC = 10 V, R = RL = 1 kΩ, with all transistors (including Q3) identical. Assume VBE = 0.7 V, VCEsat = 0.3 V, and β to be very large. For linear operation, what are the upper and lower limits of output voltage, and the corresponding inputs? How do these values change if the emitter–base junction area of Q3 is made twice as big as that of Q2? Half as big?

12.1 A class A emitter follower, biased using the circuit shown in Fig. 12.3, uses VCC = 10 V, R = RL = 1 kΩ, with all transistors (including Q3) identical. Assume VBE = 0.7 V, VCEsat = 0.3 V, and β to be very large. For linear operation, what are the upper and lower limits of output voltage, and the corresponding inputs? How do these values change if the emitter–base junction area of Q3 is made twice as big as that of Q2? Half as big?

microelectronics by sedra & smith chapter 12 questions

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