13.13 Show that if transistor Q5 in the circuit of Fig. E13.13 has a W/L ratio equal to one-quarter that of the transistors in the wide-swing current mirror of Fig. 13.13(b), and if the same value of IREF is used in both circuits, then the voltage generated, V5, is Vt +2VOV, which is the value of VBIAS needed for the gates of Q3 and Q4.
13.13 Show that if transistor Q5 in the circuit of Fig. E13.13 has a W/L ratio equal to one-quarter that of the transistors in the wide-swing current mirror of Fig. 13.13(b), and if the same value of IREF is used in both circuits, then the voltage generated, V5, is Vt +2VOV, which is the value of VBIAS needed for the gates of Q3 and Q4.
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