13.8 Assume all transistors in Fig. 13.1 have the parameters of the 0.18-µm CMOS technology in Appendix K and all gate lengths are L = 0.6 μm. The PMOS current-mirror overdrive voltages are |VOV5,7,8| = 0.5 V. Find transistor widths W5, W7, and W8 so that I = ID6,7/2 = 10IREF = 0.2 mA. Replace the current source IREF with a resistor of the appropriate value assuming VDD = VSS = 1V. 11 µm; 22 µm; 1.1 µm; 50 kΩ

13.8 Assume all transistors in Fig. 13.1 have the parameters of the 0.18-µm CMOS technology in Appendix K and all gate lengths are L = 0.6 μm. The PMOS current-mirror overdrive voltages are |VOV5,7,8| = 0.5 V. Find transistor widths W5, W7, and W8 so that I = ID6,7/2 = 10IREF = 0.2 mA. Replace the current source IREF with a resistor of the appropriate value assuming VDD = VSS = 1V.

11 µm; 22 µm; 1.1 µm; 50 kΩ

13.8 Assume all transistors in Fig. 13.1 have the parameters of the 0.18-µm CMOS technology in Appendix K and all gate lengths are L = 0.6 μm. The PMOS current-mirror overdrive voltages are |VOV5,7,8| = 0.5 V. Find transistor widths W5, W7, and W8 so that I = ID6,7/2 = 10IREF = 0.2 mA. Replace the current source IREF with a resistor of the appropriate value assuming VDD = VSS = 1V.

11 µm; 22 µm; 1.1 µm; 50 kΩ