SIM 8.45 The CMOS amplifier in Fig.8.16(a) is fabricated in the 0.13-µm CMOS process whose parameters are specified in Table K.1. All transistors have L = 0.4 µm and are operated at VOV = 0.15 V, IREF = 100 µA and VDD = 1.3 V. (a) Find the dc component of vI and the W/L ratios of the transistors. (b) Determine the small-signal voltage gain. (c) What is the allowable range of signal swing at the output for almost-linear operation? (d) If the current-source load is replaced with a resistance RD connected to a power supply as shown in Fig. 8.16(b), find the values of RD and so that ID, the voltage gain, and the output signal swing remain unchanged. - electricalstudent

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SIM 8.45 The CMOS amplifier in Fig.8.16(a) is fabricated in the 0.13-µm CMOS process whose parameters are specified in Table K.1. All transistors have L = 0.4 µm and are operated at VOV = 0.15 V, IREF = 100 µA and VDD = 1.3 V. (a) Find the dc component of vI and the W/L ratios of the transistors. (b) Determine the small-signal voltage gain. (c) What is the allowable range of signal swing at the output for almost-linear operation? (d) If the current-source load is replaced with a resistance RD connected to a power supply as shown in Fig. 8.16(b), find the values of RD and so that ID, the voltage gain, and the output signal swing remain unchanged.

SIM 8.45 The CMOS amplifier in Fig.8.16(a) is fabricated in the 0.13-µm CMOS process whose parameters are specified in Table K.1. All transistors have L = 0.4 µm and are operated at VOV = 0.15 V, IREF = 100 µA and VDD = 1.3 V. (a) Find the dc component of vI and the W/L ratios of the transistors. (b) Determine the small-signal voltage gain. (c) What is the allowable range of signal swing at the output for almost-linear operation? (d) If the current-source load is replaced with a resistance RD connected to a power supply as shown in Fig. 8.16(b), find the values of RD and so that ID, the voltage gain, and the output signal swing remain unchanged.

SIM 8.45 The CMOS amplifier in Fig.8.16(a) is fabricated in the 0.13-µm CMOS process whose parameters are specified in Table K.1. All transistors have L = 0.4 µm and are operated at VOV = 0.15 V, IREF = 100 µA and VDD = 1.3 V. (a) Find the dc component of vI and the W/L ratios of the transistors. (b) Determine the small-signal voltage gain. (c) What is the allowable range of signal swing at the output for almost-linear operation? (d) If the current-source load is replaced with a resistance RD connected to a power supply as shown in Fig. 8.16(b), find the values of RD and so that ID, the voltage gain, and the output signal swing remain unchanged.