
D 8.69 Design the CMOS cascode amplifier in Fig. 8.31 for the following specifications: gm1 = 1 mA/V and Av = −280 V/V. Assume that the amplifier is fabricated in the 0.18-µm CMOS process specified in Table K.1 in Appendix K. Use the same channel length L for all devices and operate all four devices at |VOV| = 0.2 V. Determine the required channel length L, the bias current I, and the W/L ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the W/L ratios.
D 8.69 Design the CMOS cascode amplifier in Fig. 8.31 for the following specifications: gm1 = 1 mA/V and Av = −280 V/V. Assume that the amplifier is fabricated in the 0.18-µm CMOS process specified in Table K.1 in Appendix K. Use the same channel length L for all devices and operate all four devices at |VOV| = 0.2 V. Determine the required channel length L, the bias current I, and the W/L ratio for each of four transistors. Assume that suitable bias voltages have been chosen, and neglect the Early effect in determining the W/L ratios.