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Asked: 2023-08-24T11:54:23-04:00 In:

5.10 Consider a CMOS process for which Lmin = 0.18 μm, tox = 4 nm, μn = 450 cm2/V · s, and Vt = 0.5 V. (a) Find Cox and . (b) For an NMOS transistor with W/L = 2.4 μm/0.18 μm, calculate the values of vOV, vGS, and vDSmin needed to operate the transistor in the saturation region with a current iD = 0.1 mA. (c) For the device in (b), find the values of vOV and vGS required to cause the device to operate as a 500-Ω resistor for very small vDS. (a) 8.625 10–3 pF/μm2, 388 μA/V2; (b) 0.2 V, 0.7 V, 0.2 V; (c) 0.39 V, 0.89 V

Venkyelectrical
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5.10 Consider a CMOS process for which Lmin = 0.18 μm, tox = 4 nm, μn = 450 cm2/V · s, and Vt = 0.5 V.

(a) Find Cox and .
(b) For an NMOS transistor with W/L = 2.4 μm/0.18 μm, calculate the values of vOV, vGS, and vDSmin needed to operate the transistor in the saturation region with a current iD = 0.1 mA.
(c) For the device in (b), find the values of vOV and vGS required to cause the device to operate as a 500-Ω resistor for very small vDS.
(a) 8.625 10–3 pF/μm2, 388 μA/V2; (b) 0.2 V, 0.7 V, 0.2 V; (c) 0.39 V, 0.89 V

microelectronics by sedra & smith chapter 5 questions

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