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5.6 Sketch a set of iD–vDS characteristic curves for an NMOS transistor operating with a small vDS (in the manner shown in Fig. 5.4). Let the MOSFET have kn = 10 mA/V2 and Vtn = 0.4 V. Sketch and clearly label the graphs for vGS = 0.4, 0.6, 0.8, 1.0, and 1.2 V. Let vDS be in the range 0 to 50 mV. Give the value of rDS obtained for each of the five values of vGS. Although only a sketch, your diagram should be drawn to scale as much as possible.

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5.6 Sketch a set of iD–vDS characteristic curves for an NMOS transistor operating with a small vDS (in the manner shown in Fig. 5.4). Let the MOSFET have kn = 10 mA/V2 and Vtn = 0.4 V. Sketch and clearly label the graphs for vGS = 0.4, 0.6, 0.8, 1.0, and 1.2 V. Let vDS be in the range 0 to 50 mV. Give the value of rDS obtained for each of the five values of vGS. Although only a sketch, your diagram should be drawn to scale as much as possible.

5.6 Sketch a set of iD–vDS characteristic curves for an NMOS transistor operating with a small vDS (in the manner shown in Fig. 5.4). Let the MOSFET have kn = 10 mA/V2 and Vtn = 0.4 V. Sketch and clearly label the graphs for vGS = 0.4, 0.6, 0.8, 1.0, and 1.2 V. Let vDS be in the range 0 to 50 mV. Give the value of rDS obtained for each of the five values of vGS. Although only a sketch, your diagram should be drawn to scale as much as possible.

microelectronics by sedra & smith chapter 5 questions

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