*8.25 In a manner parallel to the one used for the MOS current mirror in Section 8.2.5, analyze the BJT mirror circuit in Fig. P8.25 to determine its small-signal input resistance Rin, short-circuit current gain Ais ≡ io/ii, and output resistance Ro. To do this, replace each of Q1 and Q2 with its hybrid-π model. Let Q1 and Q2 have the same β, but let the EBJ area of Q2 be m times that of Q1. Assuming that ro1 ≫ 1/gm1, show that Find the values of Rin, Ais, and Ro for the case I = 0.1 mA, m = 5, β = 100, and VA = 30 V. Figure P8.25 (a) 800 Ω; (b) 125 Ω - electricalstudent

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*8.25 In a manner parallel to the one used for the MOS current mirror in Section 8.2.5, analyze the BJT mirror circuit in Fig. P8.25 to determine its small-signal input resistance Rin, short-circuit current gain Ais ≡ io/ii, and output resistance Ro. To do this, replace each of Q1 and Q2 with its hybrid-π model. Let Q1 and Q2 have the same β, but let the EBJ area of Q2 be m times that of Q1. Assuming that ro1 ≫ 1/gm1, show that Find the values of Rin, Ais, and Ro for the case I = 0.1 mA, m = 5, β = 100, and VA = 30 V. Figure P8.25 (a) 800 Ω; (b) 125 Ω

*8.25 In a manner parallel to the one used for the MOS current mirror in Section 8.2.5, analyze the BJT mirror circuit in Fig. P8.25 to determine its small-signal input resistance Rin, short-circuit current gain Ais ≡ io/ii, and output resistance Ro. To do this, replace each of Q1 and Q2 with its hybrid-π model. Let Q1 and Q2 have the same β, but let the EBJ area of Q2 be m times that of Q1. Assuming that ro1 ≫ 1/gm1, show that Find the values of Rin, Ais, and Ro for the case I = 0.1 mA, m = 5, β = 100, and VA = 30 V. Figure P8.25 (a) 800 Ω; (b) 125 Ω

*8.25 In a manner parallel to the one used for the MOS current mirror in Section 8.2.5, analyze the BJT mirror circuit in Fig. P8.25 to determine its small-signal input resistance Rin, short-circuit current gain Ais ≡ io/ii, and output resistance Ro. To do this, replace each of Q1 and Q2 with its hybrid-π model. Let Q1 and Q2 have the same β, but let the EBJ area of Q2 be m times that of Q1. Assuming that ro1 ≫ 1/gm1, show that Find the values of Rin, Ais, and Ro for the case I = 0.1 mA, m = 5, β = 100, and VA = 30 V. Figure P8.25 (a) 800 Ω; (b) 125 Ω