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Asked: 2023-08-12T03:08:32-04:00 In:

8.29 Find the intrinsic gain of an NMOS transistor fabricated in a process for which and = 10 V/µm. The transistor has a 0.4-µm channel length and is operated at VOV = 0.2 V. If a 1-mA/V transconductance is required, what must ID and W be? 40 V/V; 0.1 mA; 5 µm

Venkyelectrical
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8.29 Find the intrinsic gain of an NMOS transistor fabricated in a process for which and = 10 V/µm. The transistor has a 0.4-µm channel length and is operated at VOV = 0.2 V. If a 1-mA/V transconductance is required, what must ID and W be?

40 V/V; 0.1 mA; 5 µm

microelectronics by sedra & smith chapter 8 questions

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  1. Venkyelectrical
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