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Asked: 2023-08-12T04:16:12-04:00 In:

8.88 The Wilson MOS mirror in Fig. 8.38(a) is fabricated in the 0.13-µm CMOS process specified in Table K.1. All three transistors are identical with channel length L = 4Lmin and W/L = 16. For IREF = 100 µA, find the voltage at the gates of Q1 and Q2, and the voltage at the gate of Q3. What is the minimum voltage required at the drain of Q3 for proper operation of the mirror? Find the output resistance Ro. 0.56 V; 1.12 V; 0.72 V

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8.88 The Wilson MOS mirror in Fig. 8.38(a) is fabricated in the 0.13-µm CMOS process specified in Table K.1. All three transistors are identical with channel length L = 4Lmin and W/L = 16. For IREF = 100 µA, find the voltage at the gates of Q1 and Q2, and the voltage at the gate of Q3. What is the minimum voltage required at the drain of Q3 for proper operation of the mirror? Find the output resistance Ro.

0.56 V; 1.12 V; 0.72 V

8.88 The Wilson MOS mirror in Fig. 8.38(a) is fabricated in the 0.13-µm CMOS process specified in Table K.1. All three transistors are identical with channel length L = 4Lmin and W/L = 16. For IREF = 100 µA, find the voltage at the gates of Q1 and Q2, and the voltage at the gate of Q3. What is the minimum voltage required at the drain of Q3 for proper operation of the mirror? Find the output resistance Ro. 0.56 V; 1.12 V; 0.72 V8.88 The Wilson MOS mirror in Fig. 8.38(a) is fabricated in the 0.13-µm CMOS process specified in Table K.1. All three transistors are identical with channel length L = 4Lmin and W/L = 16. For IREF = 100 µA, find the voltage at the gates of Q1 and Q2, and the voltage at the gate of Q3. What is the minimum voltage required at the drain of Q3 for proper operation of the mirror? Find the output resistance Ro. 0.56 V; 1.12 V; 0.72 V

microelectronics by sedra & smith chapter 8 questions

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