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Home/8.35 For an NMOS transistor with L = 0.54 µm fabricated in the 0.18-µm process specified in Table K.1 in Appendix K, find gm, ro, and A0 obtained when the device is operated at ID = 200 µA with VOV = 0.2 V. Also, find W. 2 mA/V; 13.5 kΩ; 27 V/V; 14 Ωm

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8.35 For an NMOS transistor with L = 0.54 µm fabricated in the 0.18-µm process specified in Table K.1 in Appendix K, find gm, ro, and A0 obtained when the device is operated at ID = 200 µA with VOV = 0.2 V. Also, find W. 2 mA/V; 13.5 kΩ; 27 V/V; 14 Ωm

8.35 For an NMOS transistor with L = 0.54 µm fabricated in the 0.18-µm process specified in Table K.1 in Appendix K, find gm, ro, and A0 obtained when the device is operated at ID = 200 µA with VOV = 0.2 V. Also, find W. 2 mA/V; 13.5 kΩ; 27 V/V; 14 Ωm

8.35 For an NMOS transistor with L = 0.54 µm fabricated in the 0.18-µm process specified in Table K.1 in Appendix K, find gm, ro, and A0 obtained when the device is operated at ID = 200 µA with VOV = 0.2 V. Also, find W. 2 mA/V; 13.5 kΩ; 27 V/V; 14 Ωm

8.35 For an NMOS transistor with L = 0.54 µm fabricated in the 0.18-µm process specified in Table K.1 in Appendix K, find gm, ro, and A0 obtained when the device is operated at ID = 200 µA with VOV = 0.2 V. Also, find W. 2 mA/V; 13.5 kΩ; 27 V/V; 14 Ωm