D 5.5 An NMOS transistor fabricated in a technology for which and Vt = 0.4 V is required to operate with a small vDS as a variable resistor ranging in value from 250 Ω to 1 kΩ. Specify the range ...
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5.4 An NMOS transistor that is operated with a small vDS is found to exhibit a resistance rDS. By what factor will rDS change in each of the following situations? (a)vOV is doubled. (b) The device is replaced with another fabricated ...
5.3 Use dimensional analysis to show that the units of the process transconductance parameter are A/V2. What are the dimensions of the MOSFET transconductance parameter kn?
5.2 Calculate the total charge stored in the channel of an NMOS transistor having Cox = 25 fF/μm2, L = 65 nm, and W = 650 nm, and operated at vOV = 0.15 V and vDS =0 V. 0.16 fC
5.1 MOS technology is used to fabricate a capacitor, utilizing the gate metallization and the substrate as the capacitor electrodes. Find the area required per 1-pF capacitance for oxide thickness ranging from 1 nm to 10 nm. For a square ...
5.17 For a depletion-type NMOS transistor with Vt = −2 V and kn(WIL)=2mA/V2 , find the minimum vDS required to operate in the saturation region when vGS = +1 V. What is the corresponding value of iD? 3 V; 9mA
5.16 An NMOS transistor has Vt0 = 0.8 V, 2ϕf = 0.7 V, and γ = 0.4 V1/2. Find Vt when VSB = 3 V. 1.23 V