*3.31 A short-base diode is one where the widths of the p and n regions are much smaller than Ln and Lp, respectively. As a result, the excess minority-carrier distribution in each region is a straight line rather than the ...

3.30 A pn junction operating in the forward-bias region with a current I of 0.4 mA is found to have a diffusion capacitance of 1 pF. What diffusion capacitance do you expect this junction to have at I = 0.1 ...

3.29 The junction capacitance Cj can be thought of as that of a parallel-plate capacitor and thus given by

3.28 For a particular junction for which Cj0 = 0.4 pF, V0 = 0.75 V, and m = 1/3, find Cj at reverse-bias voltages of 1 V and 3 V. 0.23 pF

3.27 For the pn junction specified in Problem 3.14, find Cj0 and Cj at VR = 2V.

3.26 A pn junction for which the breakdown voltage is 12 V has a rated (i.e., maximum allowable) power dissipation of 0.25 W. What continuous current in the breakdown region will raise the dissipation to half the rated value? If ...

3.25 A p+n junction is one in which the doping concentration in the p region is much greater than that in the n region. In such a junction, the forward current is mostly due to hole injection across the junction. ...

3.24 Assuming that the temperature dependence of IS arises mostly because IS is proportional to , use the expression for ni in Eq. (3.2) to determine the factor by which changes as T changes from 300 K to 310 K. ...

3.23 Calculate IS and the current I for V = 780 mV for a pn junction for which NA = 1017/cm3, ND = 1016/cm3, A = 20 µm2, ni = 1.5 × 1010/cm3, Lp = 5 µm, Ln = 10 ...

3.22 In a forward-biased pn junction show that the ratio of the current component due to hole injection across the junction to the component due to electron injection is given by