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Home/microelectronics by sedra and smith 8th edition chapter 5

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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

*5.69 Neglecting the channel-length-modulation effect, show that for the depletion-type NMOS transistor of Fig. P5.69 the i–v relationship is given by (Recall that Vt is negative.) Sketch the i–v relationship for the case: Vt = −2V and kn = 2 mA/V2.

*5.69 Neglecting the channel-length-modulation effect, show that for the depletion-type NMOS transistor of Fig. P5.69 the i–v relationship is given by  

microelectronics by sedra and smith 8th edition chapter 5
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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

5.68 For a particular depletion-mode NMOS device, Vt = −2 V, W/L = 200 μA/V2, and λ = 0.02 V. When operated at vGS = 0, what is the drain current that flows for vDS = 1V, 2 V, 3 V, and 10 V? What does each of these currents become if the device width is doubled with L the same? With L also doubled? 0.3 mA, 0.416 mA, 0.424 mA, 0.48 mA; each current value is doubled; for vDS = 2V, iD = 0.408 mA; for vDS = 3 V, iD = 0.412 mA; for vDS = 10 V, iD = 0.44 mA

5.68 For a particular depletion-mode NMOS device, Vt = −2 V, W/L = 200 μA/V2, and λ = 0.02 V. When operated at vGS = 0, what is the drain current that flows for vDS = 1V, 2 V, 3 ...

microelectronics by sedra and smith 8th edition chapter 5
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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

5.67 A depletion-type n-channel MOSFET with W/L = 2 mA/V2 and Vt = −3 V has its source and gate grounded. Find the region of operation and the drain current for vD = 0.1 V, 1 V, 3 V, and 5 V. Neglect the channel-length-modulation effect.

5.67 A depletion-type n-channel MOSFET with W/L = 2 mA/V2 and Vt = −3 V has its source and gate grounded. Find the region of operation and the drain current for vD = 0.1 V, 1 V, 3 V, and ...

microelectronics by sedra and smith 8th edition chapter 5
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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

5.66 (a) Using the expression for iD in saturation and neglecting the channel-length modulation effect (i.e., let λ = 0), derive an expression for the per unit change in iD per °C [(∂iD/iD)/∂T] in terms of the per unit change in per °C [(∂/)/∂T], the temperature coefficient of Vt in V/°C (∂ Vt/∂ T), and VGS and Vt. (b) If Vt decreases by 2 mV for every °C rise in temperature, find the temperature coefficient of that results in iD decreasing by 0.2%/°C when the NMOS transistor with Vt = 1 V is operated at VGS = 5V.

5.66 (a) Using the expression for iD in saturation and neglecting the channel-length modulation effect (i.e., let λ = 0), derive an expression for the per unit change in iD per °C [(∂iD/iD)/∂T] in terms of the per unit change ...

microelectronics by sedra and smith 8th edition chapter 5
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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

5.65 Consider a diode-connected NMOS transistor fed with a constant current of 0.5 mA. Assume λ = 0. (a) If at 20°C, Vt = 0.5 V and kn = 1 mA/V2, find VGS. (b) If the temperature rises to 50°C, find the resulting VGS given that Vt changes by − 2mV/°C and changes by −0.3%/°C.

5.65 Consider a diode-connected NMOS transistor fed with a constant current of 0.5 mA. Assume λ = 0. (a) If at 20°C, Vt = 0.5 V and kn = 1 mA/V2, find VGS. (b) If the temperature rises to 50°C, find the ...

microelectronics by sedra and smith 8th edition chapter 5
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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

5.64 A p-channel transistor operates in saturation with its source voltage 3 V lower than its substrate. For y = 0.5 V1/2, 2ϕf = 0.75 V, and Vt0 = −0.7 V, find Vt.

5.64 A p-channel transistor operates in saturation with its source voltage 3 V lower than its substrate. For y = 0.5 V1/2, 2ϕf = 0.75 V, and Vt0 = −0.7 V, find Vt.

microelectronics by sedra and smith 8th edition chapter 5
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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

5.63 In a particular application, an n-channel MOSFET operates with VSB in the range 0 V to 4 V. If Vt0 is nominally 1.0 V, find the range of Vt that results if γ = 0.5 V1/2 and 2ϕf = 0.6 V. If the gate oxide thickness is increased by a factor of 4, what does the threshold voltage become? 1 V to 1.69 V; 3.74 V

5.63 In a particular application, an n-channel MOSFET operates with VSB in the range 0 V to 4 V. If Vt0 is nominally 1.0 V, find the range of Vt that results if γ = 0.5 V1/2 and 2ϕf = ...

microelectronics by sedra and smith 8th edition chapter 5
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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

5.62 A chip with a certain area designed using the 5-μm process of the late 1970s contains 20,000 MOSFETs. What does Moore’s law predict the number of transistors to be on a chip of equal area fabricated using the 32-nm process of 2013? 488 million transistors 5.63 In a particular applica

5.62 A chip with a certain area designed using the 5-μm process of the late 1970s contains 20,000 MOSFETs. What does Moore’s law predict the number of transistors to be on a chip of equal area fabricated using the 32-nm ...

microelectronics by sedra and smith 8th edition chapter 5
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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

*5.61 The table below shows four technology generations, each characterized by the minimum possible MOSFET channel length (row 1). In going from one generation to another, both L and tox are scaled by the same factor. The power supply utilized, VDD, is also scaled by the same factor, to keep the magnitudes of all electrical fields within the device unchanged. Unfortunately, but for good reasons, Vt cannot be scaled similarly. Complete the table entries, noting that in the last row you are asked to find the number of transistors that can be placed on an IC chip fabricated in each of the technologies in terms of the number obtained with the 0.5-μm technology (n).

*5.61 The table below shows four technology generations, each characterized by the minimum possible MOSFET channel length (row 1). In going from one generation to another, both L and tox are scaled by the same factor. The power supply utilized, ...

microelectronics by sedra and smith 8th edition chapter 5
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venkyelectrical
venkyelectrical
Asked: January 11, 2022In: microelectronics

5.60 In the circuit of Fig. P5.60, transistors Q1 and Q2 have Vt = 0.5 V, and the process transconductance parameter = 400 μA/V2. Find V1, V2, and V3 for each of the following cases: (a) (W/L)1 = (W/L)2 = 10 (b) (W/L)1 = 1.5(W/L)2 = 10

5.60 In the circuit of Fig. P5.60, transistors Q1 and Q2 have Vt = 0.5 V, and the process transconductance parameter = 400 μA/V2. Find V1, V2, and V3 for each of the following cases: (a) (W/L)1 = (W/L)2 = 10 (b) ...

microelectronics by sedra and smith 8th edition chapter 5
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Recent Comments

  1. venkyelectrical on Bonus Problem (10 points): In this circuit, the op amp is IDEAL. The op amp is NOT operating in the linear region. In this Circuit, V+=V_. The op amp output saturates at +12v. The output is always at saturation, either positive or negative. The output will “toggle” as Vin crosses a “threshold” voltage. Because of the positive feedback, the threshold voltage changes depending on the state of the output voltage. Find the lower and upper values of the threshold voltages to 5 places of precision.
  2. venkyelectrical on Problem #3 Operational Amplifiers (35 pts): The op amp is IDEAL and operating in the linear region. Find the voltage gain (Av) of the circuit. If Vin = -2, find io.
  3. venkyelectrical on Problem #2 Operational Amplifiers (35 pts): Op amp is ideal and operating in the linear region. Find the node voltages in the table.
  4. venkyelectrical on Problem #I Linear Amplifiers (40 pts) (SHOW ALL WORK) In the Problem, all resistor values are in ohms, voltages are volts and currents are amps. Amp “A” is voltage-to-current, Amps “B” and “C” are current-to-voltage. Use /1 = 0.01(V1), v2 = 100(/2) and V3 = 50(/3). Use Vin shown in the table. Find all the values listed in the table. Hint: Observe that R3, R4 and R5 are m parallel.
  5. venkyelectrical on 3. This problem is on the quantization and encoding. Answer to the following: Assume round-off rule for uniform quantization. We have 10 samples from the analog signal and their quantization error qε are found to be distributed as, qε =[0.33, 0.36, -0.38, 0.22, -0.4, 0.07, 0.4, -0.18, -0.25, 0.38] (a) Decide the suitable value of quantization step size ∆. Give reasoning for your answer (3) (b) We assume that qε are uniformly distributed with its probability density function f ∆ (∆) =1 /∆ for the interval [-∆/2, +∆/2]. Calculate the quantization noise power Pqε for the value of ∆ you found in part (a). (3) (c) Per the quantization noise power you calculated in part (b), calculate the signal power S [Watt] if output Signal to Q-zation noise power ratio SNRo = 30 dB. (3) (d) If we encode the quantizer output with binary code with length ‘n’(integer), decide the minimum code length ‘n’ based on the condition given in part (c) (1)

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