*5.69 Neglecting the channel-length-modulation effect, show that for the depletion-type NMOS transistor of Fig. P5.69 the i–v relationship is given by  

5.68 For a particular depletion-mode NMOS device, Vt = −2 V, W/L = 200 μA/V2, and λ = 0.02 V. When operated at vGS = 0, what is the drain current that flows for vDS = 1V, 2 V, 3 ...

5.67 A depletion-type n-channel MOSFET with W/L = 2 mA/V2 and Vt = −3 V has its source and gate grounded. Find the region of operation and the drain current for vD = 0.1 V, 1 V, 3 V, and ...

5.66 (a) Using the expression for iD in saturation and neglecting the channel-length modulation effect (i.e., let λ = 0), derive an expression for the per unit change in iD per °C [(∂iD/iD)/∂T] in terms of the per unit change ...

5.65 Consider a diode-connected NMOS transistor fed with a constant current of 0.5 mA. Assume λ = 0. (a) If at 20°C, Vt = 0.5 V and kn = 1 mA/V2, find VGS. (b) If the temperature rises to 50°C, find the ...

5.64 A p-channel transistor operates in saturation with its source voltage 3 V lower than its substrate. For y = 0.5 V1/2, 2ϕf = 0.75 V, and Vt0 = −0.7 V, find Vt.

5.63 In a particular application, an n-channel MOSFET operates with VSB in the range 0 V to 4 V. If Vt0 is nominally 1.0 V, find the range of Vt that results if γ = 0.5 V1/2 and 2ϕf = ...

5.62 A chip with a certain area designed using the 5-μm process of the late 1970s contains 20,000 MOSFETs. What does Moore’s law predict the number of transistors to be on a chip of equal area fabricated using the 32-nm ...

*5.61 The table below shows four technology generations, each characterized by the minimum possible MOSFET channel length (row 1). In going from one generation to another, both L and tox are scaled by the same factor. The power supply utilized, ...

5.60 In the circuit of Fig. P5.60, transistors Q1 and Q2 have Vt = 0.5 V, and the process transconductance parameter = 400 μA/V2. Find V1, V2, and V3 for each of the following cases: (a) (W/L)1 = (W/L)2 = 10 (b) ...