microelectronics y sedra and smith 8th edition chapter 9 Archives

Asked: February 12, 2022In: microelectronics

9.20Consider the CMOS op amp of Fig. 9.37 when fabricated in a 0.13-µm CMOS technology for which μnCox = 4μpCox = 512 µA/V2, |Vt| = 0.4 V, and VDD = VSS = 0.65 V. For a particular design, I = 128 µA, (W/L)1 = (W/L)2 = images (W/L)5 = 44.4, and (W/L)3 = (W/L)4 = 11.1. (a)Find the (W/L) ratios of Q6 and Q7 so that I6 = 128 µA. (b)Find the overdrive voltage, |VOV|, at which each of Q1, Q2, and Q6 is operating. (c)Find gm for Q1, Q2, and Q6. (d)If |VA| = 3.2 V, find ro2, ro4, ro6, and ro7. (e)Find the voltage gains A1 and A2, and the overall gain A. (a) (W/L)6 = 22.2, (W/L)7 = 88.8; (b) 0.15 V, 0.15 V, 0.15 V; (c) 0.853 mA/V, 0.853 mA/V, 1.71 mA/V; (d) 50 kΩ, 50 kΩ, 25 kΩ, 25 kΩ; (e) –21.3 V/V, –21.3 V/V, 455 V/V

9.20Consider the CMOS op amp of Fig. 9.37 when fabricated in a 0.13-µm CMOS technology for which μnCox = 4μpCox = 512 µA/V2, |Vt| = 0.4 V, and VDD = VSS = 0.65 V. For a particular design, I = ...

10. a. Xis a Gaussian random variable with EMI = ...

1.1 For the signal-source representations shown in Figs. 1.1(a) and ...

1.2 A signal source has an open-circuit voltage of 10 ...

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