10.16 In a particular common-source amplifier for which the midband voltage gain between gate and drain (i.e., −gmR’L) is −29 V/V, the NMOS transistor has Cgs = 1.0 pF and Cgd = 0.1 pF. What input capacitance would you expect? For what range of signal-source resistances can you expect the 3-dB frequency to exceed 2 MHz?

10.16 In a particular common-source amplifier for which the midband voltage gain between gate and drain (i.e., −gmR’L) is −29 V/V, the NMOS transistor has Cgs = 1.0 pF and Cgd = 0.1 pF. What input capacitance would you expect? For what range of signal-source resistances can you expect the 3-dB frequency to exceed 2 MHz?

10.16 In a particular common-source amplifier for which the midband voltage gain between gate and drain (i.e., −gmR’L) is −29 V/V, the NMOS transistor has Cgs = 1.0 pF and Cgd = 0.1 pF. What input capacitance would you expect? For what range of signal-source resistances can you expect the 3-dB frequency to exceed 2 MHz?

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