16.1 Consider MOS transistors fabricated in a 65-nm process for which μnCox = 540 µA/V2, μpCox = 100 µA/V2, Vtn = −Vtp = 0.35 V, and VDD = 1V.
(a)Find Ron of an NMOS transistor with W/L = 1.5.
(b)Find Ron of a PMOS transistor with W/L = 1.5.
(c)If Ron of the PMOS device is to be equal to that of the NMOS device in (a), what must (W/L)p be?
(a) 1.90 kΩ (b) 10.26 kΩ (c) 8.1