16.34 Repeat Example 16.3 for a CMOS inverter fabricated in a 0.13-µm process for which VDD = 1.3 V, Vtn = | Vtp | = 0.4 V, μn = 4μp, and μnCox = 500 µA/V2. In addition, QN and QP have L = 0.13 µm and (W/L)n = 1.5. For part (a) use VM = VDD/2 = 0.65 V.
16.34 Repeat Example 16.3 for a CMOS inverter fabricated in a 0.13-µm process for which VDD = 1.3 V, Vtn = | Vtp | = 0.4 V, μn = 4μp, and μnCox = 500 µA/V2. In addition, QN and QP have L = 0.13 µm and (W/L)n = 1.5. For part (a) use VM = VDD/2 = 0.65 V.
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