17.12 Use the method of equivalent resistance to design an inverter fabricated in a 65-nm technology where transistors with (W/L) = 1.5 are found to have Reff,N = 8 kΩ and Reff,P = 24 kΩ. It is required that for C = 5 fF, tPLH = tPHL, and tP ≤ 15 ps.
17.12 Use the method of equivalent resistance to design an inverter fabricated in a 65-nm technology where transistors with (W/L) = 1.5 are found to have Reff,N = 8 kΩ and Reff,P = 24 kΩ. It is required that for C = 5 fF, tPLH = tPHL, and tP ≤ 15 ps.
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