18.11Repeat Example 18.3 for a sense-amplifier circuit designed in a 65-nm process where VDD = 1.0 V, Vtn = |Vtp| = 0.35 V, μnCox = 3μpCox = 450 µA/V2, and where the bit line capacitance is reduced to CB = 0.25 pF. Use the following transistor dimensions: (W/L)n = 130 nm/65 nm and (W/L)p = 390 nm/65 nm.
1.3 ns
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