18.31 For a 6T SRAM cell fabricated in a 0.13-µm CMOS process, find the maximum permitted value of (W/L)p in terms of (W/L)a of the access transistors. Assume VDD = 1.2 V, Vtn = |Vtp| = 0.4 V, and μn = 4μp.
(W/L)p ≤ 3 (W/L)a
18.31 For a 6T SRAM cell fabricated in a 0.13-µm CMOS process, find the maximum permitted value of (W/L)p in terms of (W/L)a of the access transistors. Assume VDD = 1.2 V, Vtn = |Vtp| = 0.4 V, and μn = 4μp. (W/L)p ≤ 3 (W/L)a
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