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venkyelectrical
Asked: 2022-01-06T16:02:43+00:00 In:

3.25 A p+n junction is one in which the doping concentration in the p region is much greater than that in the n region. In such a junction, the forward current is mostly due to hole injection across the junction. Show that For the specific case in which ND = 1016/cm3, Dp = 10 cm2/s, Lp = 10 µm, and A = 104 µm2, find IS and the voltage V obtained when I = 0.2 mA. Assume operation at 300 K where ni = 1.5 × 1010/cm3.

3.25 A p+n junction is one in which the doping concentration in the p region is much greater than that in the n region. In such a junction, the forward current is mostly due to hole injection across the junction. Show that

3.25 A p+n junction is one in which the doping concentration in the p region is much greater than that in the n region. In such a junction, the forward current is mostly due to hole injection across the junction. Show that For the specific case in which ND = 1016/cm3, Dp = 10 cm2/s, Lp = 10 µm, and A = 104 µm2, find IS and the voltage V obtained when I = 0.2 mA. Assume operation at 300 K where ni = 1.5 × 1010/cm3.

microelectronics by sedra and smith 8th edition chapter 3
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