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venkyelectrical

Asked: January 6, 20222022-01-06T15:36:43+00:00 2022-01-06T15:36:43+00:00In: microelectronics

3.4 For a p-type silicon in which the dopant concentration NA = 2 × 1018/cm3, find the hole and electron concentrations at T = 300 K. 2 × 1018 cm−3; 112.5 cm−3

3.4 For a p-type silicon in which the dopant concentration NA = 2 × 1018/cm3, find the hole and electron concentrations at T = 300 K.

2 × 1018 cm−3; 112.5 cm−3

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