Home/ Questions/Q 7464
Next
In Process
venkyelectrical
  • 0
Asked: 2022-01-06T15:40:05+00:00 In:

3.7 Find the end-to-end resistance of a bar 15-µm long, 3-µm wide, and 1-µm thick, made of the following materials at 25°C: (a) intrinsic silicon (b)n-doped silicon with ND = 5 × 1016/cm3 (c) n-doped silicon with ND = 5 × 1018/cm3 (d)p-doped silicon with NA = 5 × 1016/cm3 (e) aluminum with resistivity of 2.8 µΩ·cm For intrinsic silicon, use the data in Table 3.1. For doped silicon, assume μn = 3μp = 1200 cm2/V · s. (Recall that R = ρL/A.) (a) 11.4 × 109 Ω; (b) 5 kΩ; (c) 50Ω; (d) 15.63 kΩ; (e) 0.14Ω

  • 0

3.7 Find the end-to-end resistance of a bar 15-µm long, 3-µm wide, and 1-µm thick, made of the following materials at 25°C:

(a) intrinsic silicon
(b)n-doped silicon with ND = 5 × 1016/cm3
(c) n-doped silicon with ND = 5 × 1018/cm3
(d)p-doped silicon with NA = 5 × 1016/cm3
(e) aluminum with resistivity of 2.8 µΩ·cm
For intrinsic silicon, use the data in Table 3.1. For doped silicon, assume μn = 3μp = 1200 cm2/V · s. (Recall that R = ρL/A.)

(a) 11.4 × 109 Ω; (b) 5 kΩ; (c) 50Ω; (d) 15.63 kΩ; (e) 0.14Ω

microelectronics by sedra and smith 8th edition chapter 3
Share

    1 Answer

    Sorry, you do not have a permission to view answers. Please subscribe to paid membership

    You must login to add an answer.

    Need An Account,