5.1 A 0.18-μm fabrication process is specified to have tox = 4 nm, μn = 450 cm2/V · s, and Vt = 0.5 V. Find the value of the process transconductance parameter . For a MOSFET with minimum length fabricated in this process, find the required value of W so that the device exhibits a channel resistance rDS of 1 kΩ at vGS = 1 V.
388 μA/V2; 0.93 μm
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