5.6 An NMOS transistor is fabricated in a 0.18-µm process having µnCox = 400 µA/V2 and of channel length. If L = 0.8 µm and W = 16 µm, find VA and λ. Find the value of iD that results when the device is operated with an overdrive voltage vOV = 0.2 V and vDS = 0.8 V. Also, find the value of ro at this operating point. If vDS is increased by 1 V, what is the corresponding change in iD?
4 V; 0.25 V–1; 192 µA; 25 kΩ; 40 µA