7.32 For a 0.18-µm CMOS fabrication process: Vtn = 0.5 V, Vtp = –0.5 V, μnCox = 400 µA/V2, μpCox = 100 µA/V2, VA (n-channel devices) = 5L (µm), and |VA| (p-channel devices) = 6L (µm). Find the small-signal model parameters gm and ro for both an NMOS and a PMOS transistor having W/L = 5 µm/0.5 µm and operating at ID = 100 µA. Also, find the overdrive voltage at which each device must be operating.
7.32 For a 0.18-µm CMOS fabrication process: Vtn = 0.5 V, Vtp = –0.5 V, μnCox = 400 µA/V2, μpCox = 100 µA/V2, VA (n-channel devices) = 5L (µm), and |VA| (p-channel devices) = 6L (µm). Find the small-signal model parameters gm and ro for both an NMOS and a PMOS transistor having W/L = 5 µm/0.5 µm and operating at ID = 100 µA. Also, find the overdrive voltage at which each device must be operating.
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