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venkyelectrical
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Asked: 2022-01-10T15:10:01+00:00 In:

D5.7 An n-channel MOS device in a technology for which oxide thickness is 1.4 nm, minimum channel length is 65 nm, , and Vt = 0.35 V operates in the triode region, with small vDS and with the gate–source voltage in the range 0 V to +1.0 V. If the device has the minimum channel length, what must its width be so that the minimum available resistance is 100 Ω? 1.85 μm

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D5.7 An n-channel MOS device in a technology for which oxide thickness is 1.4 nm, minimum channel length is 65 nm, , and Vt = 0.35 V operates in the triode region, with small vDS and with the gate–source voltage in the range 0 V to +1.0 V. If the device has the minimum channel length, what must its width be so that the minimum available resistance is 100 Ω?

1.85 μm

microelectronics by sedra and smith 8th edition chapter 5
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