D5.7 An n-channel MOS device in a technology for which oxide thickness is 1.4 nm, minimum channel length is 65 nm, , and Vt = 0.35 V operates in the triode region, with small vDS and with the gate–source voltage in the range 0 V to +1.0 V. If the device has the minimum channel length, what must its width be so that the minimum available resistance is 100 Ω?
1.85 μm
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