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venkyelectrical
Asked: 2022-01-10T15:10:01+00:00 In:

D5.7 An n-channel MOS device in a technology for which oxide thickness is 1.4 nm, minimum channel length is 65 nm, , and Vt = 0.35 V operates in the triode region, with small vDS and with the gate–source voltage in the range 0 V to +1.0 V. If the device has the minimum channel length, what must its width be so that the minimum available resistance is 100 Ω? 1.85 μm

D5.7 An n-channel MOS device in a technology for which oxide thickness is 1.4 nm, minimum channel length is 65 nm, , and Vt = 0.35 V operates in the triode region, with small vDS and with the gate–source voltage in the range 0 V to +1.0 V. If the device has the minimum channel length, what must its width be so that the minimum available resistance is 100 Ω?

1.85 μm

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microelectronics by sedra and smith 8th edition chapter 5
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