D6.12 Repeat Example 6.2 for a transistor fabricated in a modern integrated-circuit process. Such a process yields devices that exhibit larger vBE at the same iC because they have much smaller junction areas. The dc power supplies used in modern IC technologies fall in the range of 1 V to 3 V. Design a circuit similar to that shown in Fig. 6.15(a) except that now the power supplies are ±1.5 V and the BJT has β = 100 and exhibits vBE of 0.8 V at iC = 1 mA. Design the circuit so that a current of 2 mA flows through the collector and a voltage of +0.5 V appears at the collector.
RC = 500 Ω; RE = 338 Ω