D7.38 Design the bias circuit in Fig.7.57(b) for the CS amplifier of Fig. 7.57(a). Assume the MOSFET is specified to have Vt = 1 V, kn = 4 mA/V2, and VA = 100 V. Neglecting the Early effect, design for ID = 0.5 mA, VS = 3.5 V, and VD = 6 V using a power-supply VDD = 15 V. Specify the values of RS and RD. If a current of 2 µA is used in the voltage divider, specify the values of RG1 and RG2. Give the values of the MOSFET parameters gm and ro at the bias point.
RS = 7 kΩ; RD = 18 kΩ; RG1 = 5 MΩ; RG2 = 2.5 MΩ; gm = 2 mA/V; ro = 200 kΩ